GROUP III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS

Invention Application

US20200105915A1 GROUP III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS 审中-公开

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Patent Title: GROUP III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS
Application No.: US16701951

Application Date: 2019-12-03
Publication No.: US20200105915A1

Publication Date: 2020-04-02
Inventor: Krishna Kumar Manippady , Surani Bin Dolmanan , Kaixin Vivian Lin , Hui Ru Tan , Sudhiranjan Tripathy
Applicant: Agency for Science, Technology and Research
Applicant Address: SG Singapore
Assignee: Agency for Science, Technology and Research
Current Assignee: Agency for Science, Technology and Research
Current Assignee Address: SG Singapore
Priority: SG201209560-0 20121226
Main IPC: H01L29/778
IPC: H01L29/778 ; H01L21/02 ; H01L29/66 ; C30B25/02 ; C30B29/40

GROUP III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS

Abstract:

The invention provides a product and a manufacturing process for a high power semiconductor device. The semiconductor device comprises a GaN/AlGaN epilayer structure on an SOI substrate with a thick, uninterrupted GaN layer for use in high-power applications.

Public/Granted literature

US10763348B2 Group III nitride based high electron mobility transistors Public/Granted day:2020-09-01

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/778	.....带有二维载流子气沟道的，如HEMT