Invention Application
- Patent Title: SEMICONDUCTOR MEMORY
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Application No.: US16707646Application Date: 2019-12-09
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Publication No.: US20200111810A1Publication Date: 2020-04-09
- Inventor: Masayoshi TAGAMI , Jun Iijima , Ryota Katsumata , Kazuyuki Higashi
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP MInato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP MInato-ku
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40a9c10f
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/00 ; H01L25/065 ; H01L27/1157 ; H01L23/522 ; H01L27/11573 ; H01L27/11565

Abstract:
According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection
Public/Granted literature
- US10748928B2 Semiconductor memory Public/Granted day:2020-08-18
Information query
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