III-V COMPONENT WITH MULTI-LAYER SILICON PHOTONICS WAVEGUIDE PLATFORM
Abstract:
Embodiments provide for a photonic platform, comprising: a silicon component; a III-V component; and a bonding layer contacting the silicon component on one side and the III-V component on the opposite side; wherein the silicon component comprises: a silicon substrate; a dielectric, contacting the silicon substrate on one face and the bonding layer on the opposite face; a silicon cores disposed in the dielectric; and wherein the III-V component comprises: a III-V cladding; a III-V contact, having a first side that contacts the bonding layer; and an active region, disposed on the III-V contact and separating the III-V contact from the III-V cladding, wherein the active region is located relative to the silicon cores to define an optical path that includes the active region and the silicon cores.
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