Invention Application
- Patent Title: HIGH DENSITY SUBSTRATE AND STACKED SILICON PACKAGE ASSEMBLY HAVING THE SAME
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Application No.: US16194213Application Date: 2018-11-16
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Publication No.: US20200161229A1Publication Date: 2020-05-21
- Inventor: Jaspreet Singh Gandhi
- Applicant: Xilinx, Inc.
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L21/768 ; H01L21/48

Abstract:
An improved interconnect substrate having high density routings for a chip package assembly, a chip package assembly having a high density substrate, and methods for fabricating the same are provided that utilize substrates having a region of high density routings disposed over a region of low density routings. In one example, a method for fabricating an interconnect substrate is provided that includes forming a high density routing region by depositing a seed layer on a top surface of a low density routing region, patterning a mask layer on the seed layer, forming a plurality of conductive posts on the seed layer, removing the mask layer and the seed layer exposed between the conductive posts, and depositing a dielectric layer between the between the conductive posts, wherein at least some of the conductive posts are electrically coupled to conductive routing comprising the low density routing region.
Information query
IPC分类: