The present invention discloses a semiconductor structure with capacitor landing pad and a method for fabricating a capacitor landing pad. The semiconductor structure with capacitor landing pad includes a substrate having a plurality of contact structures, a first dielectric layer disposed on the substrate and the contact structures, and a plurality of capacitor landing pads, each of the capacitor landing pads being located in the first dielectric layer and electrically connected to the contact structure, wherein the capacitor landing pads presents a shape of a wide top and a narrow bottom and a top surface of the capacitor landing pads have a concave shape.