Invention Application
- Patent Title: METHOD OF FORMING CAPPED METALLIZED VIAS
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Application No.: US16681330Application Date: 2019-11-12
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Publication No.: US20200185272A1Publication Date: 2020-06-11
- Inventor: Navaneetha Krishnan Subbaiyan , William Richard Trutna
- Applicant: Corning Incorporated
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/20
Abstract:
A method of forming an article, including: inserting a conductive material within a via a wafer, wherein the conductive material comprises a first alloy comprising a first metal and a second metal; and contacting the conductive material with a solution comprising ions of a third metal, wherein the ions of the third metal galvanically displace a portion of the second metal from the first alloy to form a second alloy with the first metal.
Public/Granted literature
- US11158519B2 Method of forming capped metallized vias Public/Granted day:2021-10-26
Information query
IPC分类:
