- 专利标题: METAL PLATE FOR DEPOSITION MASK, AND DEPOSITION MASK AND MANUFACTURING METHOD THEREFOR
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申请号: US16832282申请日: 2020-03-27
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公开(公告)号: US20200227640A1公开(公告)日: 2020-07-16
- 发明人: Dong Mug SEONG , Jong Min YUN , Su Hyeon CHO , Hae Sik KIM , Tae Hoon HAN , Hyo Won SON , Sang Yu LEE , Sang Beum LEE
- 申请人: LG INNTEK CO., LTD.
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@64637b45 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@477bf430
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; C23C14/04 ; C23F1/02 ; H01L21/027 ; H01L21/203 ; H01L51/56 ; H01L21/475
摘要:
A metal plate to be used in the manufacture of a deposition mask comprises: a base metal plate; and a surface layer disposed on the base metal plate, wherein the surface layer includes elements different from those of the base metal plate, or has a composition ratio different from that of the base metal plate, and an etching rate of the base metal plate is greater than the etching rate of the surface layer. An embodiment includes a manufacturing method for a deposition mask having an etching factor greater than or equal to 2.5. The deposition mask of the embodiment includes a deposition pattern region and a non-deposition region, the deposition pattern region includes a plurality of through-holes, the deposition pattern region is divided into an effective region, a peripheral region, and a non-effective region, and through-holes can be formed in the effective region and the peripheral region.