- 专利标题： METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
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申请号： US16776647申请日： 2020-01-30
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公开(公告)号： US20200255975A1公开(公告)日： 2020-08-13
- 发明人: Yusuke MORI , Masashi YOSHIMURA , Masayuki IMANISHI , Akira KITAMOTO , Junichi TAKINO , Tomoaki SUMI
- 申请人： OSAKA UNIVERSITY , Panasonic Corporation
- 申请人地址： JP Osaka JP Osaka
- 专利权人： OSAKA UNIVERSITY,Panasonic Corporation
- 当前专利权人： OSAKA UNIVERSITY,Panasonic Corporation
- 当前专利权人地址： JP Osaka JP Osaka
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7e5886d9
- 主分类号： C30B25/16
- IPC分类号： C30B25/16 ; C30B29/40
摘要：
A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
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