Invention Application
- Patent Title: FILM FORMING METHOD AND FILM FORMING APPARATUS
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Application No.: US16815672Application Date: 2020-03-11
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Publication No.: US20200294798A1Publication Date: 2020-09-17
- Inventor: Yuichiro WAGATSUMA , Toyohiro KAMADA , Shinichi IKE , Shuji AZUMO
- Applicant: TOKYO ELECTRON LIMITED
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@37156f41
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/36 ; C23C16/50 ; C23C16/52
Abstract:
There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.
Public/Granted literature
- US11417514B2 Film forming method and film forming apparatus Public/Granted day:2022-08-16
Information query
IPC分类:
