发明申请
- 专利标题： FORMING A RELIABLE WRAP-AROUND CONTACT WITHOUT SOURCE/DRAIN SACRIFICAL REGIONS
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申请号： US16363349申请日： 2019-03-25
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公开(公告)号： US20200312980A1公开(公告)日： 2020-10-01
- 发明人: Julien Frougier , Kangguo Cheng , RUILONG XIE
- 申请人： International Business Machines Corporation
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/78 ; H01L21/02
摘要：
Embodiments of the present invention are directed to forming a reliable wrap-around contact (WAC) without using a source/drain sacrificial region. In a non-limiting embodiment of the invention, an isolation structure is formed over a substrate. A source or drain (S/D) region is formed over the substrate and between sidewalls of the isolation structure. A liner is formed over the S/D region and a sacrificial region is formed over the liner. The sacrificial region can be recessed below a surface of the isolation structure and an interlayer dielectric can be formed over the recessed surface of the sacrificial region. The sacrificial region can be replaced with a wrap-around contact.
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