Invention Application
- Patent Title: NOTCH TREATMENT METHODS FOR FLAW SIMULATION
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Application No.: US16912934Application Date: 2020-06-26
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Publication No.: US20200333228A1Publication Date: 2020-10-22
- Inventor: Xiaoming Li , Bogdan R. Krasnowski , Robert A. Figueroa , Robert Wardlaw
- Applicant: Bell Textron Inc.
- Applicant Address: US TX Fort Worth
- Assignee: Bell Textron Inc.
- Current Assignee: Bell Textron Inc.
- Current Assignee Address: US TX Fort Worth
- Main IPC: G01N3/62
- IPC: G01N3/62 ; G01N3/02 ; G06F30/15

Abstract:
A notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer; isolating the notch; and selectively etching the notch to provide an etched surface of the notch; wherein at least a portion of the re-melt material layer has been removed from the notch. In one aspect, there is provided a notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer, the specimen includes steel or an alloy thereof; isolating the notch; and selectively etching the notch with a first etching solution and a second etching solution to provide an etched surface on the notch; wherein at least a portion of the re-melt material layer has been removed from the notch.
Public/Granted literature
- US11428614B2 Notch treatment methods for flaw simulation Public/Granted day:2022-08-30
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