Embodiments described herein generally relate to methods of processing a substrate comprising positioning a substrate in a processing volume of a processing chamber. The substrate includes a patterned surface having a plurality of features. Individual ones of the plurality of features are defined by one or more openings formed through a multi-layer stack, and the multi-layer stack includes a chalcogen containing material. The methods further include flowing pulses of a first processing gas into the processing volume. Herein, the first processing gas includes a silicon precursor and a nitrogen precursor. The methods further include igniting and maintaining a plasma of the first processing gas. The methods further include depositing a first silicon nitride layer onto the patterned surface of the substrate. Furthermore, the methods include depositing of a second silicon nitride layer on the first silicon nitride layer.