- 专利标题： OVERLAY MEASUREMENT TARGETS DESIGN
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申请号： US16933297申请日： 2020-07-20
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公开(公告)号： US20210026238A1公开(公告)日： 2021-01-28
- 发明人: Hong XIAO
- 申请人： KLA Corporation
- 申请人地址： US CA Milpitas
- 专利权人： KLA Corporation
- 当前专利权人： KLA Corporation
- 当前专利权人地址： US CA Milpitas
- 主分类号： G03F1/86
- IPC分类号： G03F1/86 ; H01L21/027 ; G03F7/20
摘要：
A device area includes at least a first layer of photoresist and a second layer of photoresist. First layer metrology targets are positioned at an edge of one of the sides of the first layer of the mat. The first layer metrology targets have a relaxed pitch less than a device pitch. Secondary electron and back-scattered electron images can be simultaneously obtained.