A light emitting diode structure includes a semiconductor stack and a supporting breakpoint. The semiconductor stack includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer, and the second semiconductor layer has a type that is different from the first semiconductor layer. The supporting breakpoint is on the light emitting surface. The light emitting diode structure can be applied in wide color gamut (WCG) backlight module or ultra-thin backlight module.