Invention Application
- Patent Title: Receiver Front End for Digital Isolators
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Application No.: US16528065Application Date: 2019-07-31
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Publication No.: US20210036662A1Publication Date: 2021-02-04
- Inventor: Mohammad Al-Shyoukh
- Applicant: Silicon Laboratories Inc.
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/45 ; H04B1/16

Abstract:
A receiver front-end includes a first peaking gain stage configured to amplify a received differential pair of signals received on an input differential pair of nodes. The first peaking gain stage has a first frequency response including a first peak gain at or near a carrier frequency in a first pass band. The first peak gain occurs just prior to a first cutoff frequency. A second peaking gain stage is configured to amplify a differential pair of signals generated by the first peaking gain stage. The second peaking gain stage has a high input impedance and a second frequency response including a second peak gain at or near the carrier frequency in a second pass band. The second peak gain occurs just prior to a second cutoff frequency. The first peaking gain stage and the second peaking gain stage have a cascaded peak gain at or near the carrier frequency.
Public/Granted literature
- US11233482B2 Receiver front end for digital isolators Public/Granted day:2022-01-25
Information query
IPC分类: