- 专利标题： LAYER INTERLEAVING IN MULTI-LAYERED MEMORY
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申请号： US16531305申请日： 2019-08-05
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公开(公告)号： US20210042224A1公开(公告)日： 2021-02-11
- 发明人: Mikai Chen , Zhengang Chen , Charles See Yeung Kwong
- 申请人： MICRON TECHNOLOGY, INC.
- 申请人地址： US ID Boise
- 专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人： MICRON TECHNOLOGY, INC.
- 当前专利权人地址： US ID Boise
- 主分类号： G06F12/06
- IPC分类号： G06F12/06 ; G06F12/02
摘要：
Data can be received to be stored at a memory component. A first location of a first layer of the memory component to store a first portion of the data can be determined. A second location of a second layer of the memory component to store a second portion of the data can be determined, where the second layer is different from the first layer. The first portion of the data can be stored at the first layer of the memory component and the second portion of the data can be stored at the second layer of the memory component.
公开/授权文献
- US11341046B2 Layer interleaving in multi-layered memory 公开/授权日：2022-05-24
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