- 专利标题： Semiconductor Device and Method
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申请号： US16805958申请日： 2020-03-02
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公开(公告)号： US20210066499A1公开(公告)日： 2021-03-04
- 发明人: Martin Christopher Holland , Blandine Duriez , Marcus Johannes Henricus van Dal , Yasutoshi Okuno
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/267 ; H01L29/417 ; H01L29/66 ; H01L21/8234
摘要：
In an embodiment, a device includes: a semiconductor substrate having a channel region; a gate stack over the channel region; and an epitaxial source/drain region adjacent the gate stack, the epitaxial source/drain region including: a main portion in the semiconductor substrate, the main portion including a semiconductor material doped with gallium, a first concentration of gallium in the main portion being less than the solid solubility of gallium in the semiconductor material; and a finishing portion over the main portion, the finishing portion doped with gallium, a second concentration of gallium in the finishing portion being greater than the solid solubility of gallium in the semiconductor material.
公开/授权文献
- US11239368B2 Semiconductor device and method 公开/授权日：2022-02-01
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