- 专利标题： GaAs1-xSbx NANOWIRES ON A GRAPHITIC SUBSTRATE
-
申请号： US17038175申请日： 2020-09-30
-
公开(公告)号： US20210095199A1公开(公告)日： 2021-04-01
- 发明人: Shanthi Iyer , Surya Ratna Kiran Nalamati , Jia Li
- 申请人： North Carolina A&T State University
- 申请人地址： US NC Greensboro
- 专利权人： North Carolina A&T State University
- 当前专利权人： North Carolina A&T State University
- 当前专利权人地址： US NC Greensboro
- 主分类号： C09K11/62
- IPC分类号： C09K11/62 ; C09K11/75 ; C01B32/188 ; C30B29/42 ; C30B25/16
摘要：
The presently disclosed subject matter relates generally to GaAs1−xSbx nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.
公开/授权文献
- US11384286B2 GaAs1-xSbx nanowires on a graphitic substrate 公开/授权日：2022-07-12
信息查询
