Invention Application
- Patent Title: HORIZONTAL GAA NANO-WIRE AND NANO-SLAB TRANSISTORS
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Application No.: US17073505Application Date: 2020-10-19
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Publication No.: US20210119005A1Publication Date: 2021-04-22
- Inventor: Benjamin Colombeau , Hans-Joachim Gossmann
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/06 ; H01L21/02 ; H01L21/324
Abstract:
Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a doped semiconductor material between source regions and drain regions of the device. The method includes doping semiconductor material layers between source regions and drain regions of an electronic device.
Public/Granted literature
- US11495500B2 Horizontal GAA nano-wire and nano-slab transistors Public/Granted day:2022-11-08
Information query
IPC分类:
