- 专利标题: LAYOUT ARCHITECTURE FOR A CELL
-
申请号: US16731387申请日: 2019-12-31
-
公开(公告)号: US20210202466A1公开(公告)日: 2021-07-01
- 发明人: Shi-Wei Peng , Hui-Zhong Zhuang , Jiann-Tyng Tzeng , Wei-Cheng Lin , Guo-Huei Wu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L23/522
摘要:
A circuit includes a first metal layer having a first first metal layer strip adjacent to a first boundary and a second first metal layer strip adjacent to a second boundary opposite to the first boundary. The first and second first metal layer strips, the first boundary, and the second boundary are parallel to each other. The circuit further includes a second metal layer having a first second metal layer strip and a second second metal layer strip adjacent to the first second metal layer strip. The first second metal layer strip is connected to the first metal layer strip at the first first metal layer strip and the second second metal layer strip is connected to the first metal layer strip at the second first metal layer strip. Each of the first and the second second metal layer strips are parallel to each other.
信息查询
IPC分类: