Provided is a thin film transistor including a highly-textured dielectric layer, an active layer, a gate electrode and a source/drain electrode that are stacked on a base substrate. The source/drain electrode includes a source electrode and a drain electrode. The gate electrode and the active layer are insulated from each other. The source electrode and the drain electrode are electrically connected to the active layer. Constituent particles of the active layer are of monocrystalline silicon-like structures. According to the present disclosure, the highly-textured dielectric layer is adopted to replace an original buffer layer to induce the active layer to grow into a monocrystalline silicon-like structure, such that the performance of the thin film transistor is improved.