发明申请
- 专利标题: A METHOD FOR SELECTIVE INCORPORATION OF DOPANT ATOMS IN A SEMICONDUCTIVE SURFACE
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申请号: US17051739申请日: 2019-05-02
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公开(公告)号: US20210242022A1公开(公告)日: 2021-08-05
- 发明人: Michelle SIMMONS , Joris KEIZER
- 申请人: NewSouth Innovations Pty Ltd
- 申请人地址: AU Kensington
- 专利权人: NewSouth Innovations Pty Ltd
- 当前专利权人: NewSouth Innovations Pty Ltd
- 当前专利权人地址: AU Kensington
- 优先权: AU2018901480 20180502
- 国际申请: PCT/AU2019/050406 WO 20190502
- 主分类号: H01L21/223
- IPC分类号: H01L21/223
摘要:
The present disclosure is directed to a methodology for embedding a deterministic number of dopant atoms in a surface portion of a group IV semiconductor lattice. The methodology comprises the steps of: forming one or more lithographic sites on the surface portion; dosing, at a temperature below 100 K, the surface portion using a gas with molecules comprising the dopant atom and hydrogen atoms in a manner such that, a portion of the molecules bonds to the surface portion; and incorporating one or more dopant atoms in a respective lithographic site by transferring an amount of energy to the dopant atoms. The number of dopant atoms incorporated in a lithographic site is deterministic and related to the size of the lithographic site.