- 专利标题： SEMICONDUCTOR APPARATUS
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申请号： US17070617申请日： 2020-10-14
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公开(公告)号： US20210296462A1公开(公告)日： 2021-09-23
- 发明人: Daisuke HIRATA , Akihisa YAMAMOTO
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2020-051131 20200323
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/49
摘要：
A semiconductor apparatus including a bonding region in which a wire is bonded, includes: a semiconductor substrate; an oxide film provided on a principal surface of the semiconductor substrate in the bonding region; a polysilicon layer provided on the oxide film; an interlayer film partially provided on the polysilicon layer; a barrier metal directly provided on the polysilicon layer and the interlayer film; and an electrode provided on the barrier metal.
公开/授权文献
- US11410946B2 Semiconductor apparatus 公开/授权日：2022-08-09
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