- 专利标题: WIDE VOLTAGE TRANS-IMPEDANCE AMPLIFIER
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申请号: US16967745申请日: 2020-04-30
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公开(公告)号: US20210320624A1公开(公告)日: 2021-10-14
- 发明人: Chao CHEN , Jun YANG , Xinning LIU
- 申请人: SOUTHEAST UNIVERSITY
- 申请人地址: CN Nanjing
- 专利权人: SOUTHEAST UNIVERSITY
- 当前专利权人: SOUTHEAST UNIVERSITY
- 当前专利权人地址: CN Nanjing
- 优先权: CN201910434745.1 20190523
- 国际申请: PCT/CN2020/087985 WO 20200430
- 主分类号: H03F1/02
- IPC分类号: H03F1/02 ; H03F1/56
摘要:
A wide voltage trans-impedance amplifier includes a first P-channel metal oxide semiconductor (PMOS) transistor PM1, a second PMOS transistor PM2, a third PMOS transistor PM3, a fourth PMOS transistor PM4, a fifth PMOS transistor PM5, a first bias voltage VB1, a second bias voltage VB2, a third bias voltage VB3, a first N-channel metal oxide semiconductor (NMOS) transistor NM1, and a second NMOS transistor NM2. A common-gate amplifier detects a change of an input voltage, and a negative feedback is constructed by injecting a current into a current mirror to achieve a low input impedance. The trans-impedance amplifier uses a common-gate amplifier to monitor an input voltage and uses a current mirror to perform the transconductance enhancement on an input transistor, while ensuring a relatively high loop gain.
公开/授权文献
- US11190140B2 Wide voltage trans-impedance amplifier 公开/授权日:2021-11-30
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