- 专利标题: SEMICONDUCTOR MIXED MATERIAL AND MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
-
申请号: US16328423申请日: 2018-04-23
-
公开(公告)号: US20210328148A1公开(公告)日: 2021-10-21
- 发明人: Xiaonan DONG , Chao ZHANG , Kunkun GAO , Zhonghao HUANG , Yongliang ZHAO
- 申请人: CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址: CN Chongqing; CN Beijing
- 专利权人: CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人: CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址: CN Chongqing; CN Beijing
- 优先权: CN201710743461.1 20170825
- 国际申请: PCT/CN2018/084097 WO 20180423
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; C08K3/36 ; C08K3/22 ; C08K9/10 ; C08K3/08 ; C08J3/20
摘要:
A semiconductor mixed material and manufacturing method thereof, a thin film transistor and an electronic device are provided. The semiconductor mixed material includes an inorganic semiconductor nanoparticle and an organic semiconductor material, and the inorganic semiconductor nanoparticle is dispersed in the organic semiconductor material. The embodiments of the present disclosure ensure both a high electron mobility and a high charge transfer rate by mixing the inorganic semiconductor nanoparticle with the organic semiconductor material.
信息查询
IPC分类: