A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern in the photoresist layer. The developer composition includes: a first solvent having Hansen solubility parameters of 18>δd>3, 7>δp>1, and 7>δh>1; an organic acid having an acid dissociation constant, pKa, of −11