Invention Application
- Patent Title: METHOD OF FORMING SILICON FILM ON SUBSTRATE HAVING FINE PATTERN
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Application No.: US17282928Application Date: 2019-10-11
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Publication No.: US20220005690A1Publication Date: 2022-01-06
- Inventor: Yuki TANAKA , Hiroyuki HASHIMOTO , Mayuko NAKAMURA , Takashi MASUDA , Hideyuki TAKAGISHI
- Applicant: TOKYO ELECTRON LIMITED , JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: JP Tokyo; JP Nomi-shi, Ishikawa
- Assignee: TOKYO ELECTRON LIMITED,JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: TOKYO ELECTRON LIMITED,JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: JP Tokyo; JP Nomi-shi, Ishikawa
- Priority: JP2018-194401 20181015
- International Application: PCT/JP2019/040194 WO 20191011
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of forming a silicon film on a substrate having a fine pattern includes performing surface treatment with an adhesion promoter on the substrate having the fine pattern, forming a coating film by applying a silane polymer solution to the substrate on which the surface treatment has been performed, and heating the coating film.
Information query
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