Invention Application
- Patent Title: METHODS AND APPARATUS FOR FORMING STABILIZATION LAYERS
-
Application No.: US16983402Application Date: 2020-08-03
-
Publication No.: US20220037204A1Publication Date: 2022-02-03
- Inventor: Wenjing XU , Gang SHEN , Feng CHEN , Tae Hong HA
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532

Abstract:
Methods and apparatus that forms a stabilization layer on copper-based material to inhibit formation of copper voids in the copper-based material. In some embodiments, a method of forming the stabilization layer on the copper-based material includes depositing a first stabilization layer on the copper-based material where the first stabilization layer forms a continuous film on the copper-based material and is formed of a first material that does not alloy with copper, depositing a second stabilization layer on the first stabilization layer where the second stabilization layer is formed from a second material that alloys with copper and where the first stabilization layer is configured to inhibit formation of voids in the copper-based material during subsequent high thermal budget processing.
Information query
IPC分类: