- 专利标题: EMBEDDED STRUCTURE, MANUFACTURING METHOD THEREOF AND SUBSTRATE
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申请号: US17388099申请日: 2021-07-29
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公开(公告)号: US20220059520A1公开(公告)日: 2022-02-24
- 发明人: Xianming Chen , Bingsen Xie , Benxia Huang , Lei Feng , Wenshi Wang
- 申请人: Zhuhai ACCESS Semiconductor Co., Ltd
- 申请人地址: CN Zhuhai City
- 专利权人: Zhuhai ACCESS Semiconductor Co., Ltd
- 当前专利权人: Zhuhai ACCESS Semiconductor Co., Ltd
- 当前专利权人地址: CN Zhuhai City
- 优先权: CN2020108473668 20200821
- 主分类号: H01L25/00
- IPC分类号: H01L25/00 ; H01L25/065 ; H01L23/00 ; H01L23/31 ; H01L21/56
摘要:
Disclosed is a manufacturing method for an embedded structure. The method includes: preparing a temporary carrier board; preparing a second circuit layer on at least one of the upper surface and the lower surface of the temporary carrier board, and preparing a first dielectric layer to cover the second circuit layer; patterning and curing the first dielectric layer to form a cavity, mounting a device in the cavity, and performing hot-curing, wherein a surface of the device provided with a terminal faces an opening of the cavity; and preparing a second dielectric layer, wherein the device is embedded in the second dielectric layer, and a surface of the second dielectric layer is higher than a surface of the terminal by a preset value.
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