Certain aspects of the present disclosure are generally directed to techniques and apparatus for adjusting capacitance in one or more metal-insulator-metal (MIM) capacitors in an effort to reduce capacitance variation between semiconductor devices and improve yield during fabrication. One example method for fabricating a semiconductor device generally includes measuring a capacitance value of a MIM capacitor of the semiconductor device, determining the measured capacitance value of the MIM capacitor is above a target capacitance value for the MIM capacitor, and selectively rupturing a set of connections in the MIM capacitor based on the measured capacitance value. Selectively rupturing the set of connections in the MIM capacitor may reduce the capacitance value of the MIM capacitor to a value approximately that of the target capacitance value.