Invention Application
- Patent Title: SEMICONDUCTOR DEVICE WITH SOURCE RESISTOR AND MANUFACTURING METHOD THEREOF
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Application No.: US17567786Application Date: 2022-01-03
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Publication No.: US20220122913A1Publication Date: 2022-04-21
- Inventor: Po-Zeng KANG , Wen-Shen CHOU , Yung-Chow PENG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/535 ; H01L27/06 ; H01L49/02
Abstract:
A semiconductor device includes transistors and a resistor. The transistors are connected in series between a power terminal and a ground terminal, and gate terminals of the transistors being connected together. The resistor is overlaid above the transistors. The resistor is connected between a source terminal of the transistors and the ground terminal.
Public/Granted literature
- US11670586B2 Semiconductor device with source resistor and manufacturing method thereof Public/Granted day:2023-06-06
Information query
IPC分类:
