Invention Application
- Patent Title: DEFOCUS MEASUREMENT METHOD, CORRECTION METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE CORRECTION METHOD
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Application No.: US17340267Application Date: 2021-06-07
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Publication No.: US20220128911A1Publication Date: 2022-04-28
- Inventor: Jieun PARK , Youngmin SEO , Inbeom YIM
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0141567 20201028
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H01L21/66

Abstract:
A method of manufacturing a semiconductor device includes selecting a diffraction based focus (DBF) mark that is unaffected by a pattern of a lower layer; manufacturing a mask including a mark pattern for forming the DBF mark; forming the DBF mark in a cell region of a wafer by using the mask; measuring the DBF mark and monitoring defocus; correcting the defocus on the basis of a result of the monitoring; and forming a pattern in the cell region of the wafer, after correcting the defocus.
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