Invention Application
- Patent Title: METHOD FOR TRANSFERRING A USE FUL LAYER TO A CARRIER SUBSTRATE
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Application No.: US17435631Application Date: 2020-02-26
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Publication No.: US20220157650A1Publication Date: 2022-05-19
- Inventor: Didier Landru , Oleg Kononchuk , Nadia Ben Mohamed
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Priority: FR1902674 20190315
- International Application: PCT/FR2020/050369 WO 20200226
- Main IPC: H01L21/762
- IPC: H01L21/762

Abstract:
A method for transferring a useful layer to a carrier substrate comprises: joining a front face of a donor substrate to a carrier substrate along a bonding interface to form a bonded structure; annealing the bonded structure to apply a weakening thermal budget thereto and bring a buried weakened plane in the donor substrate to a defined level of weakening, the anneal reaching a maximum hold temperature; and initiating a self-sustained and propagating splitting wave in the buried weakened plane by applying a stress to the bonded structure to lead to the useful layer being transferred to the carrier substrate. The initiation of the splitting wave occurs when the bonded structure experiences a thermal gradient defining a hot region and a cool region of the bonded structure, the stress being applied locally in the cool region, and the hot region experiencing a temperature lower than the maximum hold temperature.
Public/Granted literature
- US11876015B2 Method for transferring a useful layer to a carrier substrate Public/Granted day:2024-01-16
Information query
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