• Patent Title: METHOD FOR TRANSFERRING A USE FUL LAYER TO A CARRIER SUBSTRATE
  • Application No.: US17435631
    Application Date: 2020-02-26
  • Publication No.: US20220157650A1
    Publication Date: 2022-05-19
  • Inventor: Didier LandruOleg KononchukNadia Ben Mohamed
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: Soitec
  • Current Assignee: Soitec
  • Current Assignee Address: FR Bernin
  • Priority: FR1902674 20190315
  • International Application: PCT/FR2020/050369 WO 20200226
  • Main IPC: H01L21/762
  • IPC: H01L21/762
METHOD FOR TRANSFERRING A USE FUL LAYER TO A CARRIER SUBSTRATE
Abstract:
A method for transferring a useful layer to a carrier substrate comprises: joining a front face of a donor substrate to a carrier substrate along a bonding interface to form a bonded structure; annealing the bonded structure to apply a weakening thermal budget thereto and bring a buried weakened plane in the donor substrate to a defined level of weakening, the anneal reaching a maximum hold temperature; and initiating a self-sustained and propagating splitting wave in the buried weakened plane by applying a stress to the bonded structure to lead to the useful layer being transferred to the carrier substrate. The initiation of the splitting wave occurs when the bonded structure experiences a thermal gradient defining a hot region and a cool region of the bonded structure, the stress being applied locally in the cool region, and the hot region experiencing a temperature lower than the maximum hold temperature.
Public/Granted literature
Information query
Patent Agency Ranking
0/0