Invention Application
- Patent Title: MOSFET DEVICE WITH SHIELDING REGION AND MANUFACTURING METHOD THEREOF
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Application No.: US17665398Application Date: 2022-02-04
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Publication No.: US20220157989A1Publication Date: 2022-05-19
- Inventor: Mario Giuseppe SAGGIO , Edoardo ZANETTI
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Priority: IT102018000007780 20180802
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/16 ; H01L29/06 ; H01L29/10
Abstract:
A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.
Public/Granted literature
- US12148824B2 MOSFET device with shielding region and manufacturing method thereof Public/Granted day:2024-11-19
Information query
IPC分类:
