- 专利标题： ADVANCED COPPER INTERCONNECTS WITH HYBRID MICROSTRUCTURE
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申请号： US17546511申请日： 2021-12-09
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公开(公告)号： US20220165620A1公开(公告)日： 2022-05-26
- 发明人: Daniel C. Edelstein , Chih-Chao Yang
- 申请人： Tessera, Inc.
- 申请人地址： US CA San Jose
- 专利权人： Tessera, Inc.
- 当前专利权人： Tessera, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/532 ; H01L21/02 ; H01L23/528
摘要：
A device relates to a semiconductor device. The semiconductor device includes a narrow-line bamboo microstructure integrated within a metal layer of the semiconductor device and a narrow-line polycrystalline microstructure. The narrow-line polycrystalline microstructure is integrated within the same metal layer as the narrow-line bamboo microstructure.
公开/授权文献
- US11881433B2 Advanced copper interconnects with hybrid microstructure 公开/授权日：2024-01-23
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