发明申请
- 专利标题： SEMICONDUCTOR MEMORY DEVICE HAVING CELL UNITS AND VIA REGIONS WITH A DIFFERENT WIDTH
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申请号： US17242232申请日： 2021-04-27
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公开(公告)号： US20220165744A1公开(公告)日： 2022-05-26
- 发明人: Jin Ho KIM , Tae Sung PARK , Sang Hyun SUNG , Sung Lae OH
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2020-0160671 20201126
- 主分类号： H01L27/11565
- IPC分类号： H01L27/11565 ; H01L27/11519 ; H01L27/11556 ; H01L27/11529 ; H01L27/11582 ; H01L27/11573
摘要：
A semiconductor memory device includes a memory cell array disposed over a substrate extending in a first direction and a second direction intersecting with the first direction in a first semiconductor layer, and including a plurality of cell units and at least two via regions that are arranged in the second direction, wherein a width of each of the at least two via regions in the second direction is a multiple of a width of each of the plurality of cell units in the second direction.
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