Invention Application
- Patent Title: STRUCTURE OF SURFACE ACOUSTIC WAVE DEVICE AND METHOD FOR FABRICATING THE SAME
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Application No.: US17137051Application Date: 2020-12-29
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Publication No.: US20220166402A1Publication Date: 2022-05-26
- Inventor: Chen-Hsiao Wang , Kai-Kuang Ho
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Priority: CN202011328874.1 20201124
- Main IPC: H03H9/10
- IPC: H03H9/10 ; H03H3/08 ; H03H9/02 ; H03H9/25 ; H01L41/053 ; H01L41/23

Abstract:
A surface acoustic wave (SAW) device including a substrate is provided. Multiple surface acoustic wave elements are disposed on the substrate. A conductive surrounding structure includes: a wall part, disposed on the substrate and surrounding the surface acoustic wave elements; and a lateral layer part, disposed on the wall part. The lateral layer part has an opening above the surface acoustic wave elements. A cap layer covers the lateral layer part and closes the opening.
Public/Granted literature
- US11848660B2 Surface acoustic wave device fabrication method Public/Granted day:2023-12-19
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