Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US17380256Application Date: 2021-07-20
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Publication No.: US20220181489A1Publication Date: 2022-06-09
- Inventor: Junggun YOU , Yoonjoong KIM , Seungwoo DO , Sungil PARK
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0169507 20201207
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10

Abstract:
A semiconductor device including a substrate that includes first to third regions; a first channel structure on the first region and including first channel patterns that are vertically stacked on the substrate; a second channel structure on the second region and including a second channel pattern on the substrate; a third channel structure on the third region and including third channel patterns and fourth channel patterns that are vertically and alternately stacked on the substrate; first to third gate electrodes on the first to third channel structures; and first to third source/drain patterns on opposite sides of the first to third channel structures, wherein the first, second, and fourth channel patterns include a first semiconductor material, and the third channel patterns include a second semiconductor material different from the first semiconductor material.
Public/Granted literature
- US11855209B2 Semiconductor device Public/Granted day:2023-12-26
Information query
IPC分类: