Invention Application
- Patent Title: LIGHT EMITTING DIODE WITH HIGH LUMINOUS EFFICIENCY
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Application No.: US17682611Application Date: 2022-02-28
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Publication No.: US20220181520A1Publication Date: 2022-06-09
- Inventor: Joon Hee LEE , Mi Hee Lee
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Priority: KR10-2014-0129009 20140926,KR10-2015-0054554 20150417
- Main IPC: H01L33/38
- IPC: H01L33/38

Abstract:
A light emitting diode including a light emitting structure including first and second conductive type semiconductor layers and an active layer, first openings and second openings formed through the light emitting structure to expose the first conductive type semiconductor layer, a metal layer electrically connected to the second conductive type semiconductor layer, an electrode layer filling the first and second openings to be electrically connected to the first conductive type semiconductor layer, electrode pads electrically connected to the metal layer, spaced apart along a first direction at first and second corners of the light emitting structure, in which the first openings are arranged along a second direction, and the second openings are arranged along a third direction crossing the first direction, and at least one of the first and second openings filled with the electrode layer is disposed at an intersection of the second and third directions.
Information query
IPC分类: