Invention Application
- Patent Title: CRYSTAL FILM, SEMICONDUCTOR DEVICE INCLUDING CRYSTAL FILM, AND METHOD OF PRODUCING CRYSTAL FILM
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Application No.: US17684792Application Date: 2022-03-02
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Publication No.: US20220189769A1Publication Date: 2022-06-16
- Inventor: Katsuaki KAWARA , Yuichi OSHIMA , Mitsuru OKIGAWA
- Applicant: FLOSFIA INC. , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Applicant Address: JP Kyoto; JP Ibaraki
- Assignee: FLOSFIA INC.,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee: FLOSFIA INC.,NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Current Assignee Address: JP Kyoto; JP Ibaraki
- Priority: JP2019-160769 20190903,JP2019-160770 20190903
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/04

Abstract:
There is provided a crystalline film including, a crystalline metal oxide as a major component; a corundum structure; a dislocation density of 1×107 cm−2 or less; and a surface area of 10 mm2 or more. There is provided a method of producing a crystalline film comprising, forming a first lateral crystal growth layer on a substrate by first lateral crystal growth; placing a mask on the first lateral crystal growth layer; and forming a second lateral crystal growth layer by second lateral crystal growth.
Information query
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