Invention Application
- Patent Title: TIN OXIDE AND TIN CARBIDE MATERIALS FOR SEMICONDUCTOR PATTERNING APPLICATIONS
-
Application No.: US17456255Application Date: 2021-11-23
-
Publication No.: US20220189786A1Publication Date: 2022-06-16
- Inventor: Yung-chen LIN , Chi-I LANG , Ho-yung HWANG
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/02
Abstract:
A method and apparatus for patterning semiconductor materials using tin-based materials as mandrels, hardmasks, and liner materials are provided. One or more implementations of the present disclosure use tin-oxide and/or tin-carbide materials as hardmask materials, mandrel materials, and/or liner material during various patterning applications. Tin-oxide or tin-carbide materials are easy to strip relative to other high selectivity materials like metal oxides (e.g., TiO2, ZrO2, HfO2, Al2O3) to avoid influencing critical dimensions and generate defects. In addition, tin-oxide and tin-carbide have low refractive index, k-value, and are transparent under 663-nm for lithography overlay.
Public/Granted literature
- US12272564B2 Tin oxide and tin carbide materials for semiconductor patterning applications Public/Granted day:2025-04-08
Information query
IPC分类:
