- 专利标题: SEMICONDUCTOR STRUCTURE WITH TRENCH JUNCTION BARRIER SCHOTTKY (TJBS) DIODE
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申请号: US17358693申请日: 2021-06-25
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公开(公告)号: US20220199825A1公开(公告)日: 2022-06-23
- 发明人: Chih-Fang HUANG , Jia-Wei HU , You-An LIN , Yong-Shiang JAN
- 申请人: National Tsing Hua University
- 申请人地址: TW Hsinchu City
- 专利权人: National Tsing Hua University
- 当前专利权人: National Tsing Hua University
- 当前专利权人地址: TW Hsinchu City
- 优先权: TW109144788 20201217
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/872 ; H01L29/423 ; H01L27/095
摘要:
A semiconductor structure includes: a U-metal-oxide-semiconductor field-effect transistor (UMOS) structure; and a trench junction barrier Schottky (TJBS) diode, wherein an insulating layer of a sidewall of the TJBS diode does not have a side gate,