Invention Application
- Patent Title: INTEGRATED CIRCUIT DEVICES
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Application No.: US17562428Application Date: 2021-12-27
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Publication No.: US20220208757A1Publication Date: 2022-06-30
- Inventor: Jungho DO , Sanghoon BAEK
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0185205 20201228
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/528

Abstract:
An integrated circuit device is provided. The integrated circuit device includes: a substrate with a first active area and a second active area spaced apart from each other in a first horizontal direction; a plurality of normal cells arranged on a first surface of the substrate; a power wiring structure arranged on a second surface of the substrate; and a power gating cell arranged on the first surface of the substrate. The power gating cell includes: a sleep control transistor arranged in the first active area; and a through via penetrating the second active area of the substrate. The power gating cell is configured to provide a virtual power voltage to the plurality of normal cells through a virtual power line based on a power voltage supplied from the power wiring structure through the through via and a power line.
Information query
IPC分类: