Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
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Application No.: US17476711Application Date: 2021-09-16
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Publication No.: US20220208787A1Publication Date: 2022-06-30
- Inventor: SUNGKWEON BAEK , Hakseon Kim , Jaehwa Seo
- Applicant: Samsung Electronics Co., LTD
- Applicant Address: KR SUWONI- SI
- Assignee: Samsung Electronics Co., LTD
- Current Assignee: Samsung Electronics Co., LTD
- Current Assignee Address: KR SUWONI- SI
- Priority: KR10-2020-0185216 20201228
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11556 ; H01L27/11529 ; H01L27/11573

Abstract:
A transistor of a semiconductor device includes an isolation region, an active region disposed in the isolation region, a gate extending in a second direction on the active region, and source and drain regions respectively extending in a first direction perpendicular to the second direction in the active region on first and second sides of the gate. The source and drain regions include low-concentration source and drain doping regions including first and second low-concentration source and drain doping regions The source and drain regions further include high-concentration source and drain doping regions respectively disposed in the low-concentration source and drain doping regions and having higher doping concentrations than the low-concentration source and drain doping regions. A first length in the second direction of the first low-concentration source and drain doping regions is greater than a second length in the second direction of the second low-concentration source and drain doping regions.
Public/Granted literature
- US12010846B2 Semiconductor device and electronic system including the same Public/Granted day:2024-06-11
Information query
IPC分类: