- 专利标题: MANUFACTURING METHOD OF A NANOWIRE-BASED STRUCTURE AND CAPACITOR ARRAY COMPONENT INCLUDING THE STRUCTURE
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申请号: US17698240申请日: 2022-03-18
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公开(公告)号: US20220208968A1公开(公告)日: 2022-06-30
- 发明人: Julien EL SABAHY , Frédéric VOIRON , Guy PARAT
- 申请人: Murata Manufacturing Co., Ltd. , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 申请人地址: JP Nagaokakyo-shi; FR Paris
- 专利权人: Murata Manufacturing Co., Ltd.,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人: Murata Manufacturing Co., Ltd.,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址: JP Nagaokakyo-shi; FR Paris
- 优先权: EP19306136.3 20190919
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L21/02 ; H01L23/522
摘要:
A nanowire structure is manufactured by forming islands of conductive material on a substrate, and a conductive sacrificial layer in the space between conductive islands. The conductive islands include an anodic etch barrier layer. An anodizable layer is formed, over the conductive islands and sacrificial layer, and anodized to form a porous template. Nanowires are formed in regions of the porous template that overlie the conductive islands. Removal of the porous template and sacrificial layer leaves a nanowire structure including isolated groups of nanowires connected to respective conductive islands which function as current collectors. Respective stacks of conductive and insulator layers are formed over different groups of the nanowires to form respective capacitors that are electrically isolated from one another. A monolithic component may thus be formed including an array of isolated capacitors formed over nanowires.
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