Invention Application
- Patent Title: BULK-ACOUSTIC WAVE RESONATOR AND METHOD FOR FABRICATING BULK-ACOUSTIC WAVE RESONATOR
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Application No.: US17337899Application Date: 2021-06-03
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Publication No.: US20220209737A1Publication Date: 2022-06-30
- Inventor: Tae Kyung LEE , Jae Goon AUM
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0182721 20201224
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H3/02 ; H03H9/17

Abstract:
A bulk-acoustic wave resonator includes: a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc), the content of scandium in the piezoelectric layer is 10 wt % to 25 wt %, and the piezoelectric layer has a leakage current density of 1 μA/cm2 or less.
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