Invention Application
- Patent Title: DYNAMICALLY GATED SEARCH LINES FOR LOW-POWER MULTI-STAGE CONTENT ADDRESSABLE MEMORY
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Application No.: US17522214Application Date: 2021-11-09
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Publication No.: US20220223207A1Publication Date: 2022-07-14
- Inventor: Chetan Deshpande , Sushil Kumar , Gajanan Sahebrao Jedhe , Ritesh Garg , Gaurang Prabhakar Narvekar
- Applicant: MediaTek Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: MediaTek Singapore Pte. Ltd.
- Current Assignee: MediaTek Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: G11C15/04
- IPC: G11C15/04

Abstract:
A content addressable memory (CAM) device includes multiple CAM sub-banks Each CAM sub-bank includes an array of CAM cells arranged in rows and columns and partitioned into a first stage and a second stage along a column dimension. Each CAM sub-bank further includes first-stage match lines (MLs), first-stage search line (SL) pairs, second-stage MLs, and second-stage SL pairs. Each second-stage SL pair is coupled to a column of CAM cells in the second stage and is gated by an SL enable (SL_EN signal). Each CAM sub-bank further includes a circuit operative to receive all of the first-stage MLs as input and de-assert the SL_EN signal when none of the first-stage MLs indicate a match. De-assertion of the SL_EN signal blocks a second portion search key from being provided to the second-stage SL pairs.
Public/Granted literature
- US11967377B2 Dynamically gated search lines for low-power multi-stage content addressable memory Public/Granted day:2024-04-23
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