Invention Application
- Patent Title: SEMICONDUCTOR APPARATUSES AND METHODS INVOLVING DIAMOND AND GaN-BASED FET STRUCTURES
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Application No.: US17571128Application Date: 2022-01-07
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Publication No.: US20220223586A1Publication Date: 2022-07-14
- Inventor: Srabanti Chowdhury , Mohamadali Malakoutian , Matthew A. Laurent , Chenhao Ren , Siwei Li
- Applicant: The Board of Trustees of the Leland Stanford Junior University , The Regents of the University of California
- Applicant Address: US CA Stanford; US CA Oakland
- Assignee: The Board of Trustees of the Leland Stanford Junior University,The Regents of the University of California
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University,The Regents of the University of California
- Current Assignee Address: US CA Stanford; US CA Oakland
- Main IPC: H01L27/085
- IPC: H01L27/085 ; H01L21/8258 ; H01L21/02 ; H01L23/373 ; H01L23/00
Abstract:
In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, AlxGayN (0
Public/Granted literature
- US11961837B2 Semiconductor apparatuses and methods involving diamond and GaN-based FET structures Public/Granted day:2024-04-16
Information query
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