A gate on array (GOA) device and a gate driving circuit are provided. The GOA device includes at least two GOA units. Each of the at least two GOA units includes at least one pull-down maintenance unit. The pull-down maintenance unit at least includes a first thin film transistor. The first thin film transistor includes a base substrate, a first electrode, a second electrode, and a third electrode. An electric potential of the first electrode is different from an electric potential of the second electrode. The first electrode or the second electrode is electrically connected to the third electrode.