Invention Application
- Patent Title: STRUCTURE PROVIDING POLY-RESISTOR UNDER SHALLOW TRENCH ISOLATION AND ABOVE HIGH RESISTIVITY POLYSILICON LAYER
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Application No.: US17155445Application Date: 2021-01-22
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Publication No.: US20220238631A1Publication Date: 2022-07-28
- Inventor: Michael J. Zierak , Siva P. Adusumilli , Yves T. Ngu , Steven M. Shank
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/762
Abstract:
A structure provides a polysilicon resistor under a shallow trench isolation (STI). The structure includes the STI, a resistor in the form of a doped buried polysilicon layer under the STI, and a high resistivity (HR) polysilicon layer under the doped buried polysilicon layer. The structure also includes a pair of contacts operatively coupled in a spaced manner to the doped buried polysilicon layer. A related method is also disclosed.
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